C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
نویسندگان
چکیده
An electroabsorption modulator using a side-entry architecture achieved a contrast ratio exceeding 3 dB over a 3.5 nm range in the C-band, using a voltage swing of 1 V and operating at 1008C. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown on silicon-on-insulator (SOI) wafers. The device exploits an asymmetric Fabry-Perot resonator formed between the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from the buried oxide layer of the SOI substrate.
منابع مشابه
High performance Ge/SiGe quantum well electro-absorption modulator
A 23 GHz Ge/SiGe multiple quantum well electroabsorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit. Keywords-component; Quantum-confined Stark effect, Ge/SiGe, multiple quantum well modulators
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